PART |
Description |
Maker |
FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
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http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FQA10N60C |
600V N-Channel MOSFET 600V N-Channel Advance Q-FET C-Series
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
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FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5 N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
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Fairchild Semiconductor
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FQU1N60 FQD1N60 FQD1N60TM FQU1N60TU |
600V N-Channel QFET 600V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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FQD2N60 FQU2N60 FQD2N60TM FQU2N60TU FQD2N60TF |
600V N-Channel MOSFET 600V N-Channel QFET
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBTs From old datasheet system
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INTERSIL[Intersil Corporation]
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SSW2N60B 2N60B SSI2N60B SSW2N60BTM |
600V N-Channel B-FET / Substitute of SSW2N60A 600V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
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IRF[International Rectifier] International Rectifier, Corp.
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